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G3F34MT12J
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 34A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gate Charge
38 nanoCoulombs
Package Type
TO-247-2
Maximum Current Rating
34 Amperes
Maximum Voltage Rating
1200 Volts
Typical Forward Voltage
1.6 Volts
Maximum Junction Temperature
175 degrees Celsius

Full Description

The G3F34MT12J is a robust 1200V, 34A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor, ensuring you receive genuine, high-quality components. This SIC_SCHOTTKY_DIODE offers significant advantages over traditional silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. These characteristics make it ideal for improving the efficiency and performance of power electronic systems. Applications include power factor correction (PFC), motor drives, solar inverters, and other high-frequency, high-power applications. Benefit from the superior performance and reliability of GeneSiC's SiC technology with the G3F34MT12J.

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