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G3F25MT12K
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 25A SiC Schottky Diode
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-247-2
Current Rating
25 amperes
Mounting Style
Through Hole
Voltage Rating
1200 volts
Charge Quantity
38 nanocoulombs
Forward Voltage
1.6 volts
Peak Reverse Voltage
1200 volts
Forward Current Rating
25 amperes
Typical Forward Voltage
1.6 volts
Operating Temperature Range
Negative 55 degrees Celsius to Positive 175 degrees Celsius
Maximum Junction Temperature
175 degrees Celsius
Repetitive Peak Reverse Voltage
1200 volts

Full Description

The G3F25MT12K is a robust 1200V, 25A Silicon Carbide (SiC) Schottky Diode from GeneSiC Semiconductor. Supreme Components International is an authorised distributor, ensuring you receive genuine, high-quality components. This diode offers significant advantages over traditional silicon diodes, including near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These features contribute to higher efficiency, reduced EMI, and improved system reliability. The G3F25MT12K is well-suited for applications such as power factor correction (PFC), solar inverters, uninterruptible power supplies (UPS), motor drives, and other high-frequency, high-power applications where efficiency and reliability are critical. Its superior performance enables smaller, lighter, and more efficient power electronic systems.

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