
Manufacturer | GeneSiC Semiconductor |
Short Description | SIC MOSFET 1200V 25A |
Datasheet | 📄 Datasheet |
Product Attributes
TYPE
DESCRIPTION
Category
Packagetype
TO-247-3
Technologytype
Silicon Carbide MOSFET
Drainsourcevoltage
1200 Volts
Continuousdraincurrent
25 Amperes
Drainsourceonresistance
160 mOhms
Full Description
The G3F25MT12J SIC MOSFET from GENESIC SEMICONDUCTOR represents a significant advancement in power semiconductor technology. Supreme Components International, an authorised distributor, provides this discrete semiconductor for applications requiring high voltage and current handling capabilities. This 1200V, 25A SiC MOSFET offers exceptional switching speeds, reduced on-resistance, and improved thermal performance compared to conventional silicon MOSFETs. Its robust design makes it suitable for demanding environments and applications such as power supplies, motor drives, and renewable energy systems. Benefit from the enhanced efficiency and reliability of SiC technology with the G3F25MT12J.