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G3F25MT06J
Manufacturer GeneSiC Semiconductor
Short Description Silicon Carbide Schottky Diode, 600V, 25A
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Package Type
TO-220-2
Current Rating
25 Amperes
Voltage Rating
600 Volts
Typical Forward Voltage
1.45 Volts
Peak Forward Surge Current
200 Amperes
Maximum Junction Temperature
175 Degrees Celsius

Full Description

The G3F25MT06J is a Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode features a voltage rating of 600V and a forward current of 25A, making it suitable for a wide range of power electronics applications. SiC Schottky diodes offer superior performance compared to traditional silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. These characteristics contribute to improved efficiency and reduced power loss in circuits. The G3F25MT06J is ideal for use in power factor correction (PFC) circuits, motor drives, and other high-frequency applications where efficiency and reliability are critical. Benefit from the advanced capabilities of SiC technology with this robust and efficient diode.

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