The G3F18MT12K, manufactured by GeneSiC Semiconductor, is a robust 1200V, 18A SiC Schottky Diode designed for demanding power electronics applications. As an authorised distributor, Supreme Components International provides access to this cutting-edge component. This diode features a Schottky barrier design, enabling fast switching speeds and negligible reverse recovery charge. This results in significantly reduced switching losses and improved overall system efficiency. The G3F18MT12K is particularly well-suited for use in power factor correction (PFC) circuits, motor drives, solar inverters, and other high-frequency applications. Its superior thermal performance allows for operation at higher temperatures, enhancing reliability and extending the lifespan of your designs. Choose the G3F18MT12K for optimal performance and efficiency in your power electronic systems.
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Specifications
| Parameter | Value |
|---|---|
| Package Type | TO-220-2 |
| Maximum Current Rating | 18A |
| Maximum Voltage Rating | 1200V |
| Typical Forward Voltage | 1.6V |
| Maximum Junction Temperature | 175°C |