GeneSiC Semiconductor Logo
Manufacturer Part Number (MPN) G3F18MT12J
Manufacturer GeneSiC Semiconductor
Short Description 1200V, 18A SiC Schottky Diode
Datasheet 📄 Datasheet

Supreme Components is an authorized distributor of GeneSiC Semiconductor. We do not carry stock of this item but can quote upon request. Submit your request using the form.

Product Attributes

TYPE
DESCRIPTION
Category
Technology
Silicon Carbide Schottky
Package Type
TO-277
Current Rating
18 Amperes
Mounting Style
Surface Mount
Voltage Rating
1200 Volts
Reverse Recovery Time
0 Nanoseconds
Forward Current Rating
18 Amperes
Typical Forward Voltage
1.6 Volts
Operating Temperature Range
-55 Degrees Celsius to +175 Degrees Celsius
Maximum Junction Temperature
175 Degrees Celsius
Maximum Repetitive Reverse Voltage
1200 Volts

Full Description

The G3F18MT12J is a 1200V, 18A Silicon Carbide (SiC) Schottky Diode manufactured by GeneSiC Semiconductor. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode offers superior performance compared to traditional silicon diodes, featuring near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. These characteristics make it suitable for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. The G3F18MT12J significantly reduces switching losses, enhances efficiency, and enables higher power density designs. Its robust design ensures reliable operation in demanding environments. Choose this SiC Schottky diode for your next-generation power electronics applications.

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Supreme Components is an authorized distributor of GeneSiC Semiconductor. We do not carry stock of this item but can quote upon request. Submit your request using the form.

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