The G3F135MT12J, manufactured by GeneSiC Semiconductor, is a robust 1200V, 135A Silicon Carbide (SiC) Schottky Diode. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components, ensuring you receive genuine and reliable products. This SIC_SCHOTTKY_DIODE offers superior performance compared to traditional silicon diodes, featuring near-zero reverse recovery current, temperature-independent switching behavior, and high surge current capability. It is suitable for applications such as power factor correction (PFC), motor drives, solar inverters, and other high-frequency power conversion systems. Benefit from reduced switching losses, increased efficiency, and improved thermal management with this advanced SiC diode. Its high voltage and current ratings make it a versatile choice for demanding power electronics applications.
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Specifications
| Parameter | Value |
|---|---|
| Technology | Silicon Carbide (SiC) |
| Gate Charge | 110 nanoCoulombs |
| Package Type | TO-247-2 |
| Mounting Style | Through Hole |
| Voltage Rating | 1200 Volts |
| Continuous Current | 135 Amperes |
| Forward Current Rating | 135 Amperes |
| Forward Voltage Typical | 1.65 Volts |
| Maximum Junction Temperature | 175 Degrees Celsius |