G2R50MT33K
Silicon Carbide Schottky Diode, 3300V, 50A
Brand
Product Category
GeneSiC MOSFETs
PRODUCT DETAILS
Product Description
The G2R50MT33K, manufactured by GeneSiC Semiconductor, is a robust Silicon Carbide (SiC) Schottky Diode designed for demanding applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode features a high voltage rating of 3300V and a forward current of 50A, making it suitable for high-power and high-frequency circuits. SiC Schottky diodes offer significant advantages over silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. The G2R50MT33K is ideal for use in power factor correction (PFC), motor drives, and other high-efficiency power conversion systems. Its superior performance characteristics contribute to improved system efficiency and reliability. Benefit from the advanced technology of GeneSiC Semiconductor with this exceptional SiC Schottky diode.
Product Tags
Technical Specifications
| Technology | Silicon Carbide Schottky |
|---|---|
| Package type | TO-247-2 |
| Current rating | 50 Amperes |
| Mounting style | Through Hole |
| Voltage rating | 3300 Volts |
| Charge quantity | 110 nanoCoulombs |
| Forward current rating | 50 Amperes |
| Typical forward voltage | 1.7 Volts |
| Typical reverse current | 10 microAmperes |
| Maximum junction temperature | 175 degrees Celsius |
| Repetitive peak reverse voltage | 3300 Volts |
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