G2R50MT33K

Silicon Carbide Schottky Diode, 3300V, 50A

The G2R50MT33K, manufactured by GeneSiC Semiconductor, is a robust Silicon Carbide (SiC) Schottky Diode designed for demanding applications. Supreme Components International is an authorised distributor of GeneSiC Semiconductor components. This diode features a high voltage rating of 3300V and a forward current of 50A, making it suitable for high-power and high-frequency circuits. SiC Schottky diodes offer significant advantages over silicon diodes, including faster switching speeds, lower reverse recovery charge, and higher operating temperatures. The G2R50MT33K is ideal for use in power factor correction (PFC), motor drives, and other high-efficiency power conversion systems. Its superior performance characteristics contribute to improved system efficiency and reliability. Benefit from the advanced technology of GeneSiC Semiconductor with this exceptional SiC Schottky diode.

Product Categories

GeneSiC MOSFETs

Specifications

Parameter Value
Technology Silicon Carbide Schottky
Package Type TO-247-2
Current Rating 50 Amperes
Mounting Style Through Hole
Voltage Rating 3300 Volts
Charge Quantity 110 nanoCoulombs
Forward Current Rating 50 Amperes
Typical Forward Voltage 1.7 Volts
Typical Reverse Current 10 microAmperes
Maximum Junction Temperature 175 degrees Celsius
Repetitive Peak Reverse Voltage 3300 Volts

Datasheet

Download Datasheet

Contact Us for Design-in or Quote Support Today

This is a staging environment
×