The G2R120MT33J SiC Schottky Diode, manufactured by GeneSiC Semiconductor, is designed for demanding applications requiring high voltage and fast switching speeds. With a voltage rating of 1200V and a current rating of 33A, this diode provides excellent performance in power electronics circuits. The TO-247-2 package ensures efficient heat dissipation. This SiC Schottky Diode minimizes switching losses and improves overall system efficiency. Supreme Components International is an authorised distributor of GeneSiC Semiconductor, ensuring you receive authentic and high-quality components. Applications include power factor correction (PFC), high-frequency inverters, and other high-voltage power conversion systems.
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GeneSiC MOSFETs
Specifications
| Parameter | Value |
|---|---|
| Technology | Silicon Carbide Schottky |
| Package Type | TO-247-2 |
| Surge Current | 150 Amperes |
| Current Rating | 33 Amperes |
| Voltage Rating | 1200 Volts |
| Forward Voltage | 1.7 Volts |
| Operating Temperature | Minus 55 Degrees Celsius to Plus 175 Degrees Celsius |
| Repetitive Peak Reverse Voltage | 1200 Volts |