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Home Formosa Microsemi

FMSTHQ4P6N15-H

FMSTHQ4P6N15-H

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FMSTHQ4P6N15-H

Package: SOP-08; Type: N MOS; BVDSS (V): 150; ID (A): 4.6; EAS (mJ): 20; IDSS @VDSS(V): 120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 41m; RDSON1 Max.(Ω): 56m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 4.5; RDSON2 Typ.(Ω): 45m; RDSON2 Max.(Ω): 70m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1140; Qg Typ.(nC): 20.7; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOP-08; Type: N MOS; BVDSS (V): 150; ID (A): 4.6; EAS (mJ): 20; IDSS @VDSS(V): 120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 41m; RDSON1 Max.(Ω): 56m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 4.5; RDSON2 Typ.(Ω): 45m; RDSON2 Max.(Ω): 70m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1140; Qg Typ.(nC): 20.7; AEC-Q101 Qualified: No

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