Reference Only
FMOSVNP3439E-Q1-H
Package: SOT-563; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 20/-20; ID (A): 0.75/-0.66; IDSS @VDSS(V): 20/-20; IDSS Max.(uA): ±1; IGSS VGS(V): ±10; IGSS Max.(uA): ±20; VGS(th) Min.(V): 0.35/-0.35; VGS(th) Max.(V): 1.1/-1.1; VGS(th) @ID(mA): 0.25/-0.25; RDSON1 Max.(Ω): 370/520; RDSON1 @VGS(V): 4.5/-4.5; RDSON1 @ID(A): 0.65/-0.1; RDSON2 Max.(Ω): 800; RDSON2 @VGS(V): 1.8/-1.8; RDSON2 @ID(A): 0.45/-0.5; Ciss Typ.(pF): 79/113; AEC-Q101 Qualified: Yes
Product Description
Package: SOT-563; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 20/-20; ID (A): 0.75/-0.66; IDSS @VDSS(V): 20/-20; IDSS Max.(uA): ±1; IGSS VGS(V): ±10; IGSS Max.(uA): ±20; VGS(th) Min.(V): 0.35/-0.35; VGS(th) Max.(V): 1.1/-1.1; VGS(th) @ID(mA): 0.25/-0.25; RDSON1 Max.(Ω): 370/520; RDSON1 @VGS(V): 4.5/-4.5; RDSON1 @ID(A): 0.65/-0.1; RDSON2 Max.(Ω): 800; RDSON2 @VGS(V): 1.8/-1.8; RDSON2 @ID(A): 0.45/-0.5; Ciss Typ.(pF): 79/113; AEC-Q101 Qualified: Yes