FMOSV01NP02E-H
| Parameter | Value |
|---|---|
| Package | SOT-563 |
| Type | Dual N+P MOS |
| ESD | Yes |
| BVDSS (V) | 20/-20 |
| ID (A) | 1/-0.69 |
| PD (W) | 0.42 |
| IDSS @VDSS(V) | ±16 |
| IDSS Max.(uA) | ±1 |
| IGSS VGS(V) | ±12 |
| IGSS Max.(uA) | ±10 |
| VGS(th) Min.(V) | 0.5/-0.5 |
| VGS(th) Max.(V) | 1/-1 |
| VGS(th) @ID(mA) | 0.25 |
| RDSON1 Typ.(?) | 220m/500m |
| RDSON1 Max.(?) | 250m/600m |
| RDSON1 @VGS(V) | 4.5/-4.5 |
| RDSON1 @ID(A) | 0.6/-0.43 |
| RDSON2 Typ.(?) | 390m/800m |
| RDSON2 Max.(?) | 585m/1200m |
| RDSON2 @VGS(V) | 1.8/-1.8 |
| RDSON2 @ID(A) | 0.35/-0.01 |
| Ciss Typ.(pF) | 40/57.8 |
| 70 | 0.55/0.6 |
| AEC-Q101 Qualified | No |
Product Categories:
MOSFET