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FMOSUD18N20

FMOSUD18N20

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FMOSUD18N20

Package: TO-252; Type: N MOS; BVDSS (V): 200; ID (A): 18; PD (W): 83; EAS (mJ): 15; IDSS @VDSS(V): 160; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 170m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 9; RDSON2 Max.(Ω): 180; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 9; Ciss Typ.(pF): 2047; Qg Typ.(nC): 4.5; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; Type: N MOS; BVDSS (V): 200; ID (A): 18; PD (W): 83; EAS (mJ): 15; IDSS @VDSS(V): 160; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 170m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 9; RDSON2 Max.(Ω): 180; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 9; Ciss Typ.(pF): 2047; Qg Typ.(nC): 4.5; AEC-Q101 Qualified: No

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