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FMOSUD0115

FMOSUD0115

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FMOSUD0115

Package: TO-252; BVDSS (V): -100; ID (A): -18; EAS (mJ): 157.2; IDSS @VDSS(V): -100; IDSS Max.(uA): -50; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 78m; RDSON1 Max.(Ω): 95m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 86m; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): -8; Ciss Typ.(pF): 3029; Qg Typ.(nC): 44.5; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; BVDSS (V): -100; ID (A): -18; EAS (mJ): 157.2; IDSS @VDSS(V): -100; IDSS Max.(uA): -50; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 78m; RDSON1 Max.(Ω): 95m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 86m; RDSON2 Max.(Ω): 110m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): -8; Ciss Typ.(pF): 3029; Qg Typ.(nC): 44.5; AEC-Q101 Qualified: No

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