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Home Formosa Microsemi

FMOSU07N65C-H

FMOSU07N65C-H

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FMOSU07N65C-H

Package: TO-252; Type: N MOS; BVDSS (V): 650; ID (A): 7; PD (W): 39; EAS (mJ): 352; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.2; RDSON1 Max.(Ω): 2.4; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 9; Ciss Typ.(pF): 1090; Qg Typ.(nC): 20.8; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; Type: N MOS; BVDSS (V): 650; ID (A): 7; PD (W): 39; EAS (mJ): 352; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 1.2; RDSON1 Max.(Ω): 2.4; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 9; Ciss Typ.(pF): 1090; Qg Typ.(nC): 20.8; AEC-Q101 Qualified: No

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Formosa Microsemi
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