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Home Formosa Microsemi

FMOSTHM08P03-H

FMOSTHM08P03-H

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FMOSTHM08P03-H

BVDSS (V): -30; ID (A): -8; PD (W): 2.8; IDSS @VDSS(V): -24: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 26m; RDSON1 Max.(Ω): 32m; RDSON1 @VGS(V): -10: RDSON1 @ID(A): -8; RDSON2 Typ.(Ω): 43m; RDSON2 Max.(Ω): 53m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 930; Qg Typ.(nC): 9.8; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

BVDSS (V): -30; ID (A): -8; PD (W): 2.8; IDSS @VDSS(V): -24: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 26m; RDSON1 Max.(Ω): 32m; RDSON1 @VGS(V): -10: RDSON1 @ID(A): -8; RDSON2 Typ.(Ω): 43m; RDSON2 Max.(Ω): 53m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 930; Qg Typ.(nC): 9.8; AEC-Q101 Qualified; No

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Formosa Microsemi
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