FMOSTHAGDB10DN02E-H
Dual N MOS Yes 20 10 16: IDSS Max.(uA): 1 ±8 ±10 0.4 1 0.25 9.3m 11.5m 4.5: RDSON1 @ID(A): 5 12.5m 17m 2.5 5 1700 17
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