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Home Formosa Microsemi

FMOSTHAC32N10-Q1-H

FMOSTHAC32N10-Q1-H

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FMOSTHAC32N10-Q1-H

Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 32; PD (W): 54; EAS (mJ): 97; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 21m; RDSON1 Max.(Ω): 25m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 26m; RDSON2 Max.(Ω): 30m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1317.6; Qg Typ.(nC): 27.6; AEC-Q101 Qualified: Yes

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; Type: N MOS; BVDSS (V): 100; ID (A): 32; PD (W): 54; EAS (mJ): 97; IDSS @VDSS(V): 100; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 21m; RDSON1 Max.(Ω): 25m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 26m; RDSON2 Max.(Ω): 30m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1317.6; Qg Typ.(nC): 27.6; AEC-Q101 Qualified: Yes

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Formosa Microsemi
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