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Home Formosa Microsemi

FMOSTHAB68N06-Q1-H

FMOSTHAB68N06-Q1-H

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FMOSTHAB68N06-Q1-H

Package: T3333P8; Type: N MOS; BVDSS (V): 60; ID (A): 68; PD (W): 71; EAS (mJ): 288; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.5m; RDSON1 Max.(Ω): 7.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.7m; RDSON2 Max.(Ω): 8.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1892; Qg Typ.(nC): 34.8; AEC-Q101 Qualified: Yes

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3333P8; Type: N MOS; BVDSS (V): 60; ID (A): 68; PD (W): 71; EAS (mJ): 288; IDSS @VDSS(V): 60; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.5m; RDSON1 Max.(Ω): 7.5m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 7.7m; RDSON2 Max.(Ω): 8.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 1892; Qg Typ.(nC): 34.8; AEC-Q101 Qualified: Yes

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Formosa Microsemi
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