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Home Formosa Microsemi

FMOSTHAB02P15-H

FMOSTHAB02P15-H

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FMOSTHAB02P15-H

Package: T3333P8; BVDSS (V): -150; ID (A): -2; EAS (mJ): 12.5; IDSS @VDSS(V): -120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -2; VGS(th) Max.(V): -4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 650m; RDSON1 Max.(Ω): 780m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; RDSON2 Typ.(Ω): 700m; RDSON2 Max.(Ω): 980m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 0.5; Ciss Typ.(pF): 706; Qg Typ.(nC): 10.8; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3333P8; BVDSS (V): -150; ID (A): -2; EAS (mJ): 12.5; IDSS @VDSS(V): -120; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -2; VGS(th) Max.(V): -4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 650m; RDSON1 Max.(Ω): 780m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 1; RDSON2 Typ.(Ω): 700m; RDSON2 Max.(Ω): 980m; RDSON2 @VGS(V): 6; RDSON2 @ID(A): 0.5; Ciss Typ.(pF): 706; Qg Typ.(nC): 10.8; AEC-Q101 Qualified: No

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Formosa Microsemi
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