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FMOSQ11P04

FMOSQ11P04

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FMOSQ11P04

Package: SOP-08; BVDSS (V): -40; ID (A): -11; PD (W): 2.5; EAS (mJ): 100; IDSS @VDSS(V): -40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 13m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): -8; RDSON2 Typ.(Ω): 13.6m; RDSON2 Max.(Ω): 17.7m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 2100; Qg Typ.(nC): 35; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOP-08; BVDSS (V): -40; ID (A): -11; PD (W): 2.5; EAS (mJ): 100; IDSS @VDSS(V): -40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 13m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): -8; RDSON2 Typ.(Ω): 13.6m; RDSON2 Max.(Ω): 17.7m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -5; Ciss Typ.(pF): 2100; Qg Typ.(nC): 35; AEC-Q101 Qualified: No

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Formosa Microsemi
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