Reference Only
FMOSQ09N10-H
Package: SOP-08; Type: N MOS; BVDSS (V): 100; ID (A): 10.7; PD (W): 1.7; EAS (mJ): 25; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 8.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 12; RDSON2 Typ.(Ω): 10m; RDSON2 Max.(Ω): 13m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 8; Ciss Typ.(pF): 1932; Qg Typ.(nC): 41.8; AEC-Q101 Qualified: No
Product Description
Package: SOP-08; Type: N MOS; BVDSS (V): 100; ID (A): 10.7; PD (W): 1.7; EAS (mJ): 25; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 7m; RDSON1 Max.(Ω): 8.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 12; RDSON2 Typ.(Ω): 10m; RDSON2 Max.(Ω): 13m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 8; Ciss Typ.(pF): 1932; Qg Typ.(nC): 41.8; AEC-Q101 Qualified: No