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FMOSPW26N65-H

FMOSPW26N65-H

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FMOSPW26N65-H

Package: TO-247; Type: N MOS; BVDSS (V): 650; ID (A): 26; PD (W): 190; EAS (mJ): 705; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 3.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 110m; RDSON1 Max.(Ω): 130m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; Ciss Typ.(pF): 2310; Qg Typ.(nC): 28.7; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-247; Type: N MOS; BVDSS (V): 650; ID (A): 26; PD (W): 190; EAS (mJ): 705; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 3.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 110m; RDSON1 Max.(Ω): 130m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; Ciss Typ.(pF): 2310; Qg Typ.(nC): 28.7; AEC-Q101 Qualified: No

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Formosa Microsemi
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