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FMOSM8236

FMOSM8236

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FMOSM8236

Type: Dual N MOS; BVDSS (V): 20; ID (A): 6; PD (W): 1.4; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17.5m; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 2.5; Ciss Typ.(pF): 630; Qg Typ.(nC): 10.4; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Type: Dual N MOS; BVDSS (V): 20; ID (A): 6; PD (W): 1.4; IDSS @VDSS(V): 16: IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17.5m; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 4.5: RDSON1 @ID(A): 3; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 29m; RDSON2 @VGS(V): 2.5; RDSON2 @ID(A): 2.5; Ciss Typ.(pF): 630; Qg Typ.(nC): 10.4; AEC-Q101 Qualified; No

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