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Home Formosa Microsemi

FMOSL08N04-H

FMOSL08N04-H

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FMOSL08N04-H

Package: SOT-23-6; Type: N MOS; BVDSS (V): 40; ID (A): 8; PD (W): 1.7; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 4; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 27m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1112; Qg Typ.(nC): 22; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23-6; Type: N MOS; BVDSS (V): 40; ID (A): 8; PD (W): 1.7; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 22m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 4; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 27m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 3; Ciss Typ.(pF): 1112; Qg Typ.(nC): 22; AEC-Q101 Qualified: No

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