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FMOSL02N10

FMOSL02N10

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FMOSL02N10

Package: SOT-23-6; Type: N MOS; BVDSS (V): 100; ID (A): 2.1; PD (W): 1; EAS (mJ): 0.9; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 105m; RDSON1 Max.(Ω): 126m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 135m; RDSON2 Max.(Ω): 169m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 1; Ciss Typ.(pF): 103; Qg Typ.(nC): 2.3; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: SOT-23-6; Type: N MOS; BVDSS (V): 100; ID (A): 2.1; PD (W): 1; EAS (mJ): 0.9; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 105m; RDSON1 Max.(Ω): 126m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 135m; RDSON2 Max.(Ω): 169m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 1; Ciss Typ.(pF): 103; Qg Typ.(nC): 2.3; AEC-Q101 Qualified; No

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