Reference Only
FMOSK04P9N03E-H
Package: SOT-23-3; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 4.9; PD (W): 1.25; EAS (mJ): 6; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 26m; RDSON1 Max.(Ω): 31m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 45m; RDSON2 Max.(Ω): 68m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.5; Ciss Typ.(pF): 632; Qg Typ.(nC): 4.1; AEC-Q101 Qualified: No
Product Description
Package: SOT-23-3; Type: N MOS; ESD: Yes; BVDSS (V): 30; ID (A): 4.9; PD (W): 1.25; EAS (mJ): 6; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.4; VGS(th) Max.(V): 1.3; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 26m; RDSON1 Max.(Ω): 31m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 2; RDSON2 Typ.(Ω): 45m; RDSON2 Max.(Ω): 68m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.5; Ciss Typ.(pF): 632; Qg Typ.(nC): 4.1; AEC-Q101 Qualified: No