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Home Formosa Microsemi

FMOSGTAC57N04-Q1-H

FMOSGTAC57N04-Q1-H

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FMOSGTAC57N04-Q1-H

Package: T5060P8; Type: N MOS; BVDSS (V): 40; ID (A): 57; PD (W): 39; EAS (mJ): 90; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.1m; RDSON1 Max.(Ω): 7.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 9.9m; RDSON2 Max.(Ω): 12.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 30; Ciss Typ.(pF): 780; Qg Typ.(nC): 13.6; AEC-Q101 Qualified: Yes

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; Type: N MOS; BVDSS (V): 40; ID (A): 57; PD (W): 39; EAS (mJ): 90; IDSS @VDSS(V): 40; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.3; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.1m; RDSON1 Max.(Ω): 7.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 9.9m; RDSON2 Max.(Ω): 12.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 30; Ciss Typ.(pF): 780; Qg Typ.(nC): 13.6; AEC-Q101 Qualified: Yes

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