Reference Only
FMOSF01NP02E-H
Package: SOT-363; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 20/-20; PD (W): 0.25; IDSS @VDSS(V): 16/-16; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.10/-1.00; VGS(th) Max.(V): 2.10/-2.00; VGS(th) @ID(mA): 0.25/-0.25; RDSON1 Typ.(Ω): 245m/500m; RDSON1 Max.(Ω): 300m/600m; RDSON1 @VGS(V): 4.5/-4.5; RDSON1 @ID(A): 0.6/-0.43; RDSON2 Typ.(Ω): 242m/800m; RDSON2 Max.(Ω): 580m/1.2; RDSON2 @VGS(V): 1.8/-1.8; RDSON2 @ID(A): 0.35/-0.01; Ciss Typ.(pF): 40/57.8; Qg Typ.(nC): 0.54/0.6; AEC-Q101 Qualified: No
Product Description
Package: SOT-363; Type: Dual N+P MOS; ESD: Yes; BVDSS (V): 20/-20; PD (W): 0.25; IDSS @VDSS(V): 16/-16; IDSS Max.(uA): 1; IGSS VGS(V): ±12; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.10/-1.00; VGS(th) Max.(V): 2.10/-2.00; VGS(th) @ID(mA): 0.25/-0.25; RDSON1 Typ.(Ω): 245m/500m; RDSON1 Max.(Ω): 300m/600m; RDSON1 @VGS(V): 4.5/-4.5; RDSON1 @ID(A): 0.6/-0.43; RDSON2 Typ.(Ω): 242m/800m; RDSON2 Max.(Ω): 580m/1.2; RDSON2 @VGS(V): 1.8/-1.8; RDSON2 @ID(A): 0.35/-0.01; Ciss Typ.(pF): 40/57.8; Qg Typ.(nC): 0.54/0.6; AEC-Q101 Qualified: No