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FMOSCDU11N65-H

FMOSCDU11N65-H

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FMOSCDU11N65-H

Package: TO-252; Type: N MOS; BVDSS (V): 650; ID (A): 11; PD (W): 83; EAS (mJ): 300; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 341m; RDSON1 Max.(Ω): 360m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 3.4; Ciss Typ.(pF): 780; Qg Typ.(nC): 18.9; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-252; Type: N MOS; BVDSS (V): 650; ID (A): 11; PD (W): 83; EAS (mJ): 300; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2; VGS(th) Max.(V): 4; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 341m; RDSON1 Max.(Ω): 360m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 3.4; Ciss Typ.(pF): 780; Qg Typ.(nC): 18.9; AEC-Q101 Qualified: No

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Formosa Microsemi
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