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FMOSCDPW56N65-H

FMOSCDPW56N65-H

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FMOSCDPW56N65-H

Package: TO-247; Type: N MOS; BVDSS (V): 650; ID (A): 56; PD (W): 410; EAS (mJ): 484; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 3.5; VGS(th) Max.(V): 5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 45m; RDSON1 Max.(Ω): 50m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 28; Ciss Typ.(pF): 5306; Qg Typ.(nC): 101

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-247; Type: N MOS; BVDSS (V): 650; ID (A): 56; PD (W): 410; EAS (mJ): 484; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 3.5; VGS(th) Max.(V): 5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 45m; RDSON1 Max.(Ω): 50m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 28; Ciss Typ.(pF): 5306; Qg Typ.(nC): 101

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Formosa Microsemi
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