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FMOSCDP30N65-H

FMOSCDP30N65-H

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FMOSCDP30N65-H

Package: TO-220AB; Type: N MOS; BVDSS (V): 650; ID (A): 30; PD (W): 318; EAS (mJ): 500; IDSS @VDSS(V): 520; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 95m; RDSON1 Max.(Ω): 110m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; Ciss Typ.(pF): 2263; Qg Typ.(nC): 48; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-220AB; Type: N MOS; BVDSS (V): 650; ID (A): 30; PD (W): 318; EAS (mJ): 500; IDSS @VDSS(V): 520; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 95m; RDSON1 Max.(Ω): 110m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; Ciss Typ.(pF): 2263; Qg Typ.(nC): 48; AEC-Q101 Qualified: No

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