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Home Formosa Microsemi

FMOSB11P2NM65-H

FMOSB11P2NM65-H

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FMOSB11P2NM65-H

Package: TO-263; Type: N MOS; BVDSS (V): 650; ID (A): 11.2; PD (W): 145; EAS (mJ): 180; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 364m; RDSON1 Max.(Ω): 430m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; Ciss Typ.(pF): 703; Qg Typ.(nC): 18.4; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: TO-263; Type: N MOS; BVDSS (V): 650; ID (A): 11.2; PD (W): 145; EAS (mJ): 180; IDSS @VDSS(V): 650; IDSS Max.(uA): 1; IGSS VGS(V): ±30; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 2.5; VGS(th) Max.(V): 4.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 364m; RDSON1 Max.(Ω): 430m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; Ciss Typ.(pF): 703; Qg Typ.(nC): 18.4; AEC-Q101 Qualified: No

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