Reference Only
FMOSAV24DN06-H
Package: T3333P8 Dual; Type: Dual N MOS; BVDSS (V): 60; ID (A): 24; PD (W): 14; EAS (mJ): 26; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 13.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 14m; RDSON2 Max.(Ω): 18.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 731; Qg Typ.(nC): 13.9; AEC-Q101 Qualified: No
Product Description
Package: T3333P8 Dual; Type: Dual N MOS; BVDSS (V): 60; ID (A): 24; PD (W): 14; EAS (mJ): 26; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 10m; RDSON1 Max.(Ω): 13.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 14m; RDSON2 Max.(Ω): 18.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 731; Qg Typ.(nC): 13.9; AEC-Q101 Qualified: No