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FMOSAT20DN06-H

FMOSAT20DN06-H

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FMOSAT20DN06-H

Type: Dual N MOS; BVDSS (V): 60; ID (A): 20; PD (W): 87.4; EAS (mJ): 19; IDSS @VDSS(V): 60: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 25m; RDSON1 @VGS(V): 10: RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 35m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1970; Qg Typ.(nC): 42.8; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Type: Dual N MOS; BVDSS (V): 60; ID (A): 20; PD (W): 87.4; EAS (mJ): 19; IDSS @VDSS(V): 60: IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 17m; RDSON1 Max.(Ω): 25m; RDSON1 @VGS(V): 10: RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 22m; RDSON2 Max.(Ω): 35m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 1970; Qg Typ.(nC): 42.8; AEC-Q101 Qualified; No

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