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Home Formosa Microsemi

FMOSAG6016-H

FMOSAG6016-H

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FMOSAG6016-H

Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 44; EAS (mJ): 72.2; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 12m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Max.(Ω): 15m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 6; Ciss Typ.(pF): 3240; Qg Typ.(nC): 28.7; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 44; EAS (mJ): 72.2; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 12m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 8; RDSON2 Max.(Ω): 15m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 6; Ciss Typ.(pF): 3240; Qg Typ.(nC): 28.7; AEC-Q101 Qualified: No

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