Reference Only
FMOSAG0056
Package: T3030P8; Type: N MOS; BVDSS (V): 100; ID (A): 27; PD (W): 37.9; EAS (mJ): 45; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 16m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 30m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 849; Qg Typ.(nC): 17.9; AEC-Q101 Qualified: No
Product Description
Package: T3030P8; Type: N MOS; BVDSS (V): 100; ID (A): 27; PD (W): 37.9; EAS (mJ): 45; IDSS @VDSS(V): 80; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 16m; RDSON1 Max.(Ω): 20m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 10; RDSON2 Typ.(Ω): 21m; RDSON2 Max.(Ω): 30m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 10; Ciss Typ.(pF): 849; Qg Typ.(nC): 17.9; AEC-Q101 Qualified: No