The FMOSAE0P66P02K-H Power MOSFET from Formosa Microsemi is an N-Channel enhancement mode MOSFET designed for efficient power switching. With a drain-source voltage rating of 60V and a continuous drain current of 2A, this MOSFET is suitable for a variety of applications. Its low on-resistance minimizes power loss, contributing to improved energy efficiency. The device is housed in a small SOT-23 package, making it ideal for space-constrained designs. As an authorized distributor of Formosa Microsemi components, Supreme Components International guarantees the authenticity and quality of this product. This MOSFET is commonly used in DC-DC converters, load switches, and other power management circuits.