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FMOSAE014N02-H

FMOSAE014N02-H

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FMOSAE014N02-H

Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 1.4; PD (W): 0.7; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 190m; RDSON1 Max.(Ω): 230m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.55; RDSON2 Typ.(Ω): 303m; RDSON2 Max.(Ω): 455m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 43; Qg Typ.(nC): 2; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T1006P3; Type: N MOS; ESD: Yes; BVDSS (V): 20; ID (A): 1.4; PD (W): 0.7; IDSS @VDSS(V): 16; IDSS Max.(uA): 1; IGSS VGS(V): ±8; IGSS Max.(uA): ±10; VGS(th) Min.(V): 0.5; VGS(th) Max.(V): 1; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 190m; RDSON1 Max.(Ω): 230m; RDSON1 @VGS(V): 4.5; RDSON1 @ID(A): 0.55; RDSON2 Typ.(Ω): 303m; RDSON2 Max.(Ω): 455m; RDSON2 @VGS(V): 1.8; RDSON2 @ID(A): 0.35; Ciss Typ.(pF): 43; Qg Typ.(nC): 2; AEC-Q101 Qualified: No

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Formosa Microsemi
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