FMOSAC64N10-Q1-H
N-Channel MOSFET, 100V, 64A, TO-220 package.
PRODUCT DETAILS
Product Description
The FMOSAC64N10-Q1-H Power MOSFET, manufactured by Formosa Microsemi, is a high-performance N-Channel enhancement mode MOSFET designed for demanding power switching applications. With a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 64A, this MOSFET delivers exceptional power handling capabilities. Its low on-resistance (Rds(on)) minimizes power losses, enhancing overall system efficiency. The device is housed in a TO-220 package, providing excellent thermal dissipation and simplifying assembly. This MOSFET is suitable for a wide range of applications, including DC-DC converters, motor control, and power inverters. Supreme Components International is an authorised distributor of Formosa Microsemi, guaranteeing the authenticity and quality of this product. Benefit from reliable performance and efficient power management with the FMOSAC64N10-Q1-H.
Product Tags
Technical Specifications
| Gate charge | 35 nanoCoulombs |
|---|---|
| Package type | TO-220 |
| Polarity type | N-Channel |
| Drain source voltage | 100 Volts |
| Continuous drain current | 64 Amperes |
| Drain source on resistance | 0.014 Ohm at GateSourceVoltage equals 10 Volts |
| Operating junction temperature | Minus 55 Degrees Celsius to 175 Degrees Celsius |
Ordering Information
| Packaging Type | Tube |
|---|
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1 day
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