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FMOSAC64N10-Q1-H

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FMOSAC64N10-Q1-H
Manufacturer Formosa Microsemi
Short Description N-Channel MOSFET, 100V, 64A, TO-220 package.
Datasheet 📄 Datasheet

Product Attributes

TYPE
DESCRIPTION
Category
Gatecharge
35 nanoCoulombs
Packagetype
TO-220
Polaritytype
N-Channel
Drainsourcevoltage
100 Volts
Continuousdraincurrent
64 Amperes
Drainsourceonresistance
0.014 Ohm at GateSourceVoltage equals 10 Volts
Operatingjunctiontemperature
Minus 55 Degrees Celsius to 175 Degrees Celsius

Ordering Information

Parameter
Value
Packaging Type
TUBE

Full Description

The FMOSAC64N10-Q1-H Power MOSFET, manufactured by Formosa Microsemi, is a high-performance N-Channel enhancement mode MOSFET designed for demanding power switching applications. With a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 64A, this MOSFET delivers exceptional power handling capabilities. Its low on-resistance (Rds(on)) minimizes power losses, enhancing overall system efficiency. The device is housed in a TO-220 package, providing excellent thermal dissipation and simplifying assembly. This MOSFET is suitable for a wide range of applications, including DC-DC converters, motor control, and power inverters. Supreme Components International is an authorised distributor of Formosa Microsemi, guaranteeing the authenticity and quality of this product. Benefit from reliable performance and efficient power management with the FMOSAC64N10-Q1-H.

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