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FMOSAC3117

FMOSAC3117

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FMOSAC3117

Package: T5060P8; BVDSS (V): -30; ID (A): -100; EAS (mJ): 312; IDSS @VDSS(V): -24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.1; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.2m; RDSON1 Max.(Ω): 5.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 4.2m; RDSON2 Max.(Ω): 5.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 7600; Qg Typ.(nC): 140; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; BVDSS (V): -30; ID (A): -100; EAS (mJ): 312; IDSS @VDSS(V): -24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.1; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 4.2m; RDSON1 Max.(Ω): 5.4m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 30; RDSON2 Typ.(Ω): 4.2m; RDSON2 Max.(Ω): 5.4m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 7600; Qg Typ.(nC): 140; AEC-Q101 Qualified: No

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Formosa Microsemi
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