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Home Formosa Microsemi

FMOSAC3080B-H

FMOSAC3080B-H

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FMOSAC3080B-H

Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 110; EAS (mJ): 204; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.4m; RDSON1 Max.(Ω): 2.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 3.6m; RDSON2 Max.(Ω): 4.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 7; Ciss Typ.(pF): 2235; Qg Typ.(nC): 20.4; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 110; EAS (mJ): 204; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.2; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.4m; RDSON1 Max.(Ω): 2.8m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 15; RDSON2 Typ.(Ω): 3.6m; RDSON2 Max.(Ω): 4.5m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 7; Ciss Typ.(pF): 2235; Qg Typ.(nC): 20.4; AEC-Q101 Qualified: No

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