Reference Only
FMOSAC275N06-H
Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 275; PD (W): 160; EAS (mJ): 480; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.9m; RDSON1 Max.(Ω): 1.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.3m; RDSON2 Max.(Ω): 1.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 6338; Qg Typ.(nC): 102; AEC-Q101 Qualified: No
Product Description
Package: T5060P8; Type: N MOS; BVDSS (V): 60; ID (A): 275; PD (W): 160; EAS (mJ): 480; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.9m; RDSON1 Max.(Ω): 1.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.3m; RDSON2 Max.(Ω): 1.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 6338; Qg Typ.(nC): 102; AEC-Q101 Qualified: No