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FMOSAC245N03-H

FMOSAC245N03-H

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FMOSAC245N03-H

Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 245; PD (W): 96; EAS (mJ): 205; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±100; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.85m; RDSON1 Max.(Ω): 1.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.3m; RDSON2 Max.(Ω): 1.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 4185; Qg Typ.(nC): 64; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T5060P8; Type: N MOS; BVDSS (V): 30; ID (A): 245; PD (W): 96; EAS (mJ): 205; IDSS @VDSS(V): 24; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±100; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 0.85m; RDSON1 Max.(Ω): 1.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 1.3m; RDSON2 Max.(Ω): 1.7m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 20; Ciss Typ.(pF): 4185; Qg Typ.(nC): 64; AEC-Q101 Qualified: No

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