Reference Only
FMOSAB99N04-H
Package: T3333P8; Type: N MOS; BVDSS (V): 40; ID (A): 99; PD (W): 52; EAS (mJ): 79; IDSS @VDSS(V): 32; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.5m; RDSON1 Max.(Ω): 3.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 3.5m; RDSON2 Max.(Ω): 4.6m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1424; Qg Typ.(nC): 22; AEC-Q101 Qualified; No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 40; ID (A): 99; PD (W): 52; EAS (mJ): 79; IDSS @VDSS(V): 32; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 2.5m; RDSON1 Max.(Ω): 3.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 3.5m; RDSON2 Max.(Ω): 4.6m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1424; Qg Typ.(nC): 22; AEC-Q101 Qualified; No