Reference Only
FMOSAB59N06-Q1-H
Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 59; PD (W): 39; EAS (mJ): 94; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.0m; RDSON1 Max.(Ω): 6.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 6.0m; RDSON2 Max.(Ω): 7.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 2122; Qg Typ.(nC): 32; AEC-Q101 Qualified: Yes
Product Description
Package: T3030P8; Type: N MOS; BVDSS (V): 60; ID (A): 59; PD (W): 39; EAS (mJ): 94; IDSS @VDSS(V): 48; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1.2; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 5.0m; RDSON1 Max.(Ω): 6.2m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 20; RDSON2 Typ.(Ω): 6.0m; RDSON2 Max.(Ω): 7.8m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 2122; Qg Typ.(nC): 32; AEC-Q101 Qualified: Yes