FMOSAB42P03-H

Reference Only

FMOSAB42P03-H

Package: T3333P8; BVDSS (V): -30; ID (A): -42; PD (W): 37; IDSS @VDSS(V): -30; IDSS Max.(uA): -1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 14m; RDSON1 @VGS(V): -10; RDSON1 @ID(A): -30; RDSON2 Max.(Ω): 22m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -15; Qg Typ.(nC): 22; AEC-Q101 Qualified: No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

Package: T3333P8; BVDSS (V): -30; ID (A): -42; PD (W): 37; IDSS @VDSS(V): -30; IDSS Max.(uA): -1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.5; VGS(th) @ID(mA): 0.25; RDSON1 Max.(Ω): 14m; RDSON1 @VGS(V): -10; RDSON1 @ID(A): -30; RDSON2 Max.(Ω): 22m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -15; Qg Typ.(nC): 22; AEC-Q101 Qualified: No

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