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Home Formosa Microsemi

FMOSAB35P03-H

FMOSAB35P03-H

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FMOSAB35P03-H

BVDSS (V): -30; ID (A): -35; PD (W): 30; EAS (mJ): 105; IDSS @VDSS(V): -25: IDSS Max.(uA): -1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.8; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 9.3m; RDSON1 Max.(Ω): 10.5m; RDSON1 @VGS(V): -10: RDSON1 @ID(A): -10; RDSON2 Typ.(Ω): 16m; RDSON2 Max.(Ω): 25m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -25; Ciss Typ.(pF): 2152; Qg Typ.(nC): 40.1; AEC-Q101 Qualified; No

Manufacturer:
Formosa Microsemi
Category:
Discrete Semiconductors
Sub Category:
MOSFETs
Formosa Microsemi

Product Description

BVDSS (V): -30; ID (A): -35; PD (W): 30; EAS (mJ): 105; IDSS @VDSS(V): -25: IDSS Max.(uA): -1; IGSS VGS(V): ±25; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): -1.2; VGS(th) Max.(V): -2.8; VGS(th) @ID(mA): -0.25; RDSON1 Typ.(Ω): 9.3m; RDSON1 Max.(Ω): 10.5m; RDSON1 @VGS(V): -10: RDSON1 @ID(A): -10; RDSON2 Typ.(Ω): 16m; RDSON2 Max.(Ω): 25m; RDSON2 @VGS(V): -4.5; RDSON2 @ID(A): -25; Ciss Typ.(pF): 2152; Qg Typ.(nC): 40.1; AEC-Q101 Qualified; No

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Formosa Microsemi
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