Reference Only
FMOSAB3008A-H
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 30; PD (W): 23; EAS (mJ): 49; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 8.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 25; RDSON2 Typ.(Ω): 11m; RDSON2 Max.(Ω): 14.3m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1310; Qg Typ.(nC): 23; AEC-Q101 Qualified: No
Product Description
Package: T3333P8; Type: N MOS; BVDSS (V): 30; ID (A): 30; PD (W): 23; EAS (mJ): 49; IDSS @VDSS(V): 30; IDSS Max.(uA): 1; IGSS VGS(V): ±20; IGSS Max.(uA): ±0.1; VGS(th) Min.(V): 1; VGS(th) Max.(V): 2.5; VGS(th) @ID(mA): 0.25; RDSON1 Typ.(Ω): 6.2m; RDSON1 Max.(Ω): 8.1m; RDSON1 @VGS(V): 10; RDSON1 @ID(A): 25; RDSON2 Typ.(Ω): 11m; RDSON2 Max.(Ω): 14.3m; RDSON2 @VGS(V): 4.5; RDSON2 @ID(A): 15; Ciss Typ.(pF): 1310; Qg Typ.(nC): 23; AEC-Q101 Qualified: No